Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2007-12-04
2007-12-04
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S770000, C438S774000, C438S762000, C438S765000, C438S769000, C257SE21285, C257SE21283, C257SE21282
Reexamination Certificate
active
10519451
ABSTRACT:
A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film.In a method for oxidation of a surface of an object to be processed in a single processing container8which can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400° C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.
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Nishita Tatsuo
Sato Toru
Suzuki Keisuke
Yonekawa Tsukasa
Ahmadi Mohsen
Lebentritt Michael
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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