Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1989-12-27
1991-07-09
Fisher, Richard V.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156643, 156646, 134 1, 134 31, H01L 21306
Patent
active
050303198
ABSTRACT:
Oxide material, on a substrate, in a reactor, is etched by dissolving a hydrogen halide reaction product in a liquid phase reaction product. Both the hydrogen halide and liquid phase reaction products are produced through a chemical reaction of a reactive gas containing hydrogen and halogen elements as well as at least one gaseous compound which has been remotely activated. The liquid phase reaction product is obtained by condensation on the oxide material. The use of charged particle beams and irradiating light is discussed.
REFERENCES:
patent: 3485687 (1969-12-01), Chapman et al.
patent: 3494768 (1970-02-01), Schaefer
patent: 3520684 (1970-07-01), Metlay et al.
patent: 4127437 (1978-11-01), Bersin et al.
patent: 4473435 (1984-09-01), Zafiropoulo et al.
patent: 4518456 (1985-05-01), Bjorkholm
patent: 4615756 (1986-10-01), Tsujii et al.
patent: 4643799 (1987-02-01), Tsujii et al.
patent: 4740267 (1988-04-01), Knauer et al.
patent: 4807016 (1989-02-01), Douglas et al.
patent: 4816098 (1989-03-01), Davis et al.
Hayasaka Nobuo
Nishino Hirotaka
Okano Haruo
Bruckner John J.
Fisher Richard V.
Kabushiki Kaisha Toshiba
LandOfFree
Method of oxide etching with condensed plasma reaction product does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of oxide etching with condensed plasma reaction product, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of oxide etching with condensed plasma reaction product will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-616222