Method of optimized stitching for digital micro-mirror device

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S725000, C430S030000

Reexamination Certificate

active

07026251

ABSTRACT:
A method of providing a reticle layout for a die having at least three patterns, namely a right pattern, a center pattern, and a left pattern, where the center pattern is oversized relative to the photolithography step size. To avoid the non-uniformity effects resulting from stitching the center pattern, the center pattern size is minimized. This is accomplished by moving portions of the center pattern to the left and right patterns.

REFERENCES:
patent: 5825194 (1998-10-01), Bhuva et al.
patent: 6194105 (2001-02-01), Shacham et al.
patent: 6541165 (2003-04-01), Pierrat

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