Method of optical lithography using phase shift masking

Details Method of optical lithography using phase shift masking Method of optical lithography using phase shift masking

1994-07-18

1996-11-12

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430394, 430396, G03F 720

Patent

active

055738907

ABSTRACT:
A method of performing poly level lithography in manufacturing an integrated circuit using a phase shift mask in a step and repeat optical tool where the phase assignment for said phase shift mask is determined by a technique which determines, without assignment conflict, the Intersection of the gate pattern with the active gate pattern and which divides the Intersection into categories of stacks where a slightly different phase assignment rule is employed for the different stacks.

REFERENCES:
patent: 5302477 (1994-04-01), Dao
patent: 5308741 (1994-05-01), Kemp
patent: 5328807 (1994-07-01), Tanaka
patent: 5352550 (1994-10-01), Okamoto

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