Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2009-07-31
2011-12-13
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189011, C365S174000, C365S189030
Reexamination Certificate
active
08077536
ABSTRACT:
A method of maintaining the data state of a semiconductor dynamic random access memory cell is provided, wherein the memory cell comprises a substrate being made of a material having a first conductivity type selected from p-type conductivity type and n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type; a second region having the second conductivity type, the second region being spaced apart from the first region; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; and a gate positioned between the first and second regions and adjacent the body region.
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Cannon Alan W.
Law Office of Alan W. Cannon
Le Toan
Phung Anh
Zeno Semiconductor, Inc.
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