Method of operating dynamic random access memory

Details Method of operating dynamic random access memory Method of operating dynamic random access memory

2007-01-02

2007-01-02

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S149000, C365S189090

Reexamination Certificate

active

10711938

ABSTRACT:
A method of operating a dynamic random access memory (DRAM) using a bit line and a bit line bar is disclosed. The DRAM stores data by using a charge storage device, which is coupled to the bit line via a switch device. A voltage drop occurs when the switch device is turned on. The method programs the charge storage device with a first voltage or a zero voltage in response to a power voltage reduction due to the voltage drop. For accessing the data, the bit line and the bit line bar are charged to the power voltage, the switch device is turned on and the data stored in the charge storage device is determined according to a voltage difference between the bit line and the bit line bar.

REFERENCES:
patent: 5724286 (1998-03-01), Gillingham
patent: 5903511 (1999-05-01), Gillingham
patent: 6118717 (2000-09-01), Brady
patent: 6421285 (2002-07-01), Matsuzaki et al.
patent: 6741514 (2004-05-01), Sako
patent: 6829682 (2004-12-01), Kirihata et al.

Affiliated with

Also associated with

Rating

Method of operating dynamic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of operating dynamic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of operating dynamic random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3817401