Method of operating and structure of phase change random...

Details Method of operating and structure of phase change random... Method of operating and structure of phase change random...

2006-01-11

2010-11-02

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C257S002000, C257S003000, C257S004000, C257S005000, C257SE29002, C365S163000

Reexamination Certificate

active

07824953

ABSTRACT:
Provided is a method of operating a phase change random access memory comprising a switching device and a storage node comprising a phase change layer. The method includes applying a reset current passing through the phase change layer from a lower portion of the phase change layer toward an upper portion of the phase change layer and being smaller than 1.6 mA to the storage node to change a portion of the phase change layer into an amorphous state. The set voltage is in an opposite direction is exemplary embodiments, and a connector is of small cross-sectional area.

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First Office Action from corresponding Chinese Application No. 2006100057378, issued on Aug. 29, 2008.

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