Method of operating a programmable resistance memory array

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S100000, C365S046000

Reexamination Certificate

active

07423897

ABSTRACT:
A method of operating a programmable resistance memory array. The method comprises writing to all of the programmable resistance elements within the same row of the memory array at substantially the same time. The programmable resistance elements preferably include phase-change materials such as chalcogenides.

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