Method of operating a programmable resistance memory array

Details Method of operating a programmable resistance memory array Method of operating a programmable resistance memory array

2008-03-04

2008-03-04

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189070, C365S189090, C365S210130

Reexamination Certificate

active

11524670

ABSTRACT:
A method of operating a programmable resistance memory array. The method comprises writing to all of the programmable resistance elements within the same row of the memory array at substantially the same time. The programmable resistance elements preferably include phase-change materials such as chalcogenides.

REFERENCES:
patent: 6314014 (2001-11-01), Lowrey et al.
patent: 6600690 (2003-07-01), Nahas et al.
patent: 6608773 (2003-08-01), Lowrey et al.
patent: 6785163 (2004-08-01), Yeh et al.
patent: 6791859 (2004-09-01), Hush et al.
patent: 6831856 (2004-12-01), Pashmakov
patent: 6967865 (2005-11-01), Lee
patent: 7002833 (2006-02-01), Hush et al.
patent: 7020006 (2006-03-01), Chevallier et al.
patent: 7038959 (2006-05-01), Garni
patent: 7050328 (2006-05-01), Khouri et al.
patent: 7161861 (2007-01-01), Gogl et al.

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