Method of obtaining semiconductor chips

Details Method of obtaining semiconductor chips Method of obtaining semiconductor chips

1989-12-05

1991-06-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437227, 437228, 148DIG28, H01L 21302

Patent

active

050249703

ABSTRACT:
An insulating strip layer is provided in the middle portion of an isolating zone which isolates electronic element regions from each other. A platinum layer is formed and sintered, whereby platinum silicide layers are obtained between the insulating strip layer and the electronic element regions. A silicon nitride film is formed and etched by plasma. The plasma etches the silicon nitride film and selectively etches the wafer through the gaps between the platinum silicide layers and layers adjacent thereto whereby grooves are obtained in the isolating zone. A crack which may be caused in the cutting or dicing process is stopped at the grooves.

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