Method of obtaining polycrystalline silicon

Details Method of obtaining polycrystalline silicon Method of obtaining polycrystalline silicon

1979-05-10

1980-12-09

Smith, John D.

Plastic and nonmetallic article shaping or treating: processes

Gas or vapor deposition of article forming material onto...

264 36, 264162, 264139, 264138, 427 86, 427 93, 427 94, 427140, 427249, H01L 21205

Patent

active

042384362

ABSTRACT:
Polycrystalline silicon is obtained by providing a silicon wafer having disposed over at least one face thereof a base coating of oxide, nitride or oxynitride composition, forming a substantially pinhole-free and scratch-free layer of carbon on said base coating over at least the face, forming on the face of the carbon layer a layer of polycrystalline silicon, and removing the silicon layer from the protective coating. Any of the carbon layer adhering to the silicon layer is easily removable to provide the silicon layer separate from the substrate. The wafer/coating unit is reusable in the procedure. The wafer/coating/carbon layer unit comprises a workpiece useful in the practice of the invention.

REFERENCES:
patent: 3686378 (1972-08-01), Dietze
patent: 3867497 (1975-02-01), Teich
patent: 4027053 (1977-05-01), Lesk
patent: 4065533 (1977-12-01), Koppl et al.
patent: 4131659 (1978-12-01), Authier et al.
patent: 4141764 (1979-02-01), Authier et al.

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