Method of NBTI prediction

Details Method of NBTI prediction Method of NBTI prediction

2007-09-11

2007-09-11

Liu, Shuwang (Department: 2809)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S765010, C324S762010

Reexamination Certificate

active

11278827

ABSTRACT:
A method includes measuring a gate leakage current of at least one transistor. A single stress bias voltage is applied to the at least one transistor at a given temperature for a stress period t. The stress bias voltage causes a 10% degradation in a drive current of the transistor at the given temperature within the stress period t. A negative bias temperature instability (NBTI) lifetime τ of the transistor is estimated based on the measured gate leakage current and a relationship between drive current degradation and time observed during the applying step.

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