Method of narrowing flash memory device threshold voltage distri

Details Method of narrowing flash memory device threshold voltage distri Method of narrowing flash memory device threshold voltage distri

1994-12-01

1997-05-27

Dinh, Son T.

Static information storage and retrieval

Floating gate

Particular biasing

3651853, 36518533, 365218, G11C 700

Patent

active

056338236

ABSTRACT:
A method of erasing a sector for a flash memory device, the sector having a plurality of word lines with each word line having a plurality of memory cells therealong, each cell having a source region, comprises various steps. First, all of the memory cells in the sector are programmed. The memory cells are then simultaneously erased by applying a first voltage to the sources and a second voltage to the word lines. Subsequently, a first cell along a first word line is read to determine if the first cell is under-erased. Responsive to the first cell being under-erased, the first voltage is applied to the source region of the first cell and the second voltage is applied to the first word line while a third voltage is applied to the plurality of word lines except the first word line, the third voltage being higher than the second voltage.

REFERENCES:
patent: 4279024 (1981-07-01), Schrenk
patent: 4805151 (1989-02-01), Terada et al.
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5233562 (1993-08-01), Ong et al.
patent: 5237535 (1993-08-01), Miekle et al.
patent: 5268870 (1993-12-01), Harari
patent: 5272669 (1993-12-01), Samachisa et al.
patent: 5335198 (1994-08-01), Van Buskirk et al.
patent: 5424993 (1995-06-01), Lee et al.

Affiliated with

Also associated with

Rating

Method of narrowing flash memory device threshold voltage distri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of narrowing flash memory device threshold voltage distri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of narrowing flash memory device threshold voltage distri will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2333810