Method of monitoring surface roughness of crystal, and crystal g

Details Method of monitoring surface roughness of crystal, and crystal g Method of monitoring surface roughness of crystal, and crystal g

1991-05-21

1993-04-27

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156611, 156DIG103, 437105, 118715, C30B 2306

Patent

active

052059006

ABSTRACT:
Changes in the formation of crystal surface roughness are monitored by making a laser beam incident on the surface of a growing crystal and detecting a reflected laser beam diffracted at the surface of the growing crystal, at a position standing apart from the optical axis of mirror face reflected light of the incident laser beam. A crystal growth equipment making use of this method is also disclosed.

REFERENCES:
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patent: 4159919 (1979-07-01), McFee et al.
patent: 4786616 (1988-11-01), Awal et al.
patent: 4812650 (1989-03-01), Eckstein et al.
patent: 4935382 (1990-06-01), Johnston et al.
"Controversy of Critical Layer Thickness for InGaAs/GaAs Strained-Layer Epitaxy" P. L. Gourley, I. J. Frits and L. R. Dawson, Applied Physics Letters, vol. 52 (1988), p. 377.
"Photoluminescence Study of Strain Relaxation in Ga.sub.1-x In.sub.x As/GaAs Single Heterostructures" D. Morris, A. P. Roth, R. A. Masut, C. Lacelle and J. L. Brebner, Journal of Applied Physics, vol. 64 (1988), p. 4135.

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