Method of monitoring status of a silicon layer by detecting, emi

Details Method of monitoring status of a silicon layer by detecting, emi Method of monitoring status of a silicon layer by detecting, emi

1983-06-09

1984-02-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156643, 156646, 156662, 204192E, 356425, 356437, H01L 21306, C03C 1500, C03C 2506, B44C 122

Patent

active

044301510

ABSTRACT:
In a monitoring method of monitoring status of a silicon layer etched in a hollow space by plasma, a chlorine including gas is introduced into a hollow space to cause CCl-radical to occur in the hollow space. A first spectrum region is selected to detect first emission spectra of the CCl-radical which are variable in intensity only during the etching and which may include a wavelength of 307 nm. Preferably, a second spectrum region is selected to second emission spectra invariable even during the etching and to indicate the beginning and the end of the etching by monitoring a relationship between the first and the second emission spectra. The second spectrum region may include a wavelength of 396 nm. Alternatively, emission spectra of OH-radical which results from water remaining in the hollow space may be monitored as the first emission spectra.

REFERENCES:
patent: 4289188 (1981-09-01), Mizutani et al.
patent: 4367044 (1983-01-01), Booth et al.

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