Method of monitoring single crystal during growth

Details Method of monitoring single crystal during growth Method of monitoring single crystal during growth

1984-12-10

1987-01-06

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

378 73, C30B 1526

Patent

active

046344900

ABSTRACT:
Single crystal during growth is irradiated by an slitted X-ray beam and the diffracted X-ray beam from the crystal is monitored by an image amplifier with a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal. A half portion of the single crystal during growth is irradiated by a slitted X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth is displayed on one half portion of the display of the image amplifier and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.

REFERENCES:
patent: 3105901 (1963-10-01), Ladell et al.
patent: 3499736 (1970-03-01), Zwaneburg
Van Dijk et al., Jl of Crystal Growth vol. 21, 1974 pp. 310-312.

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