Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2005-08-02
2005-08-02
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C438S302000, C438S373000, C438S514000, C438S519000
Reexamination Certificate
active
06924215
ABSTRACT:
A method of monitoring and adjusting the position of a wafer with respect to an ion beam including setting the position of a wafer holder so that a wafer to be held therein is positioned at a tilt angle of 45 degrees and a twist angle of 45 degrees with respect to the path of an ion beam; positioning a n-type wafer without screen oxide in the wafer holder; implanting boron species into a region of the wafer at 160 KeV and a dose level of 5.0×1013atoms/cm2; periodically measuring the sheet resistivity of a implanted wafer and readjusting the wafer tilt angle when the sheet resistivity is greater than 30 ohms/square.
REFERENCES:
patent: 5226118 (1993-07-01), Baker et al.
patent: 5308780 (1994-05-01), Chou et al.
patent: 5344787 (1994-09-01), Nagalingam et al.
patent: 5914499 (1999-06-01), Hermansson et al.
patent: 6232619 (2001-05-01), Chen et al.
patent: 6287880 (2001-09-01), Erickson et al.
patent: 6777251 (2004-08-01), Lu et al.
patent: 6815229 (2004-11-01), Halliyal et al.
patent: 2002/0124791 (2002-09-01), Ito
patent: 362145729 (1987-06-01), None
patent: 40512917 (1993-05-01), None
Chang Juinn-Jie
Huang Hung-Ta
Huang Stanley
Sun Hsueh-Li
Tseng Tom
Mitchell James M.
Taiwan Semiconductor Manufacturing Co. Ltd
Thompson Craig A.
Tung & Associates
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