Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-06-03
2000-08-29
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438 14, 438597, 438612, H01L 2144
Patent
active
061108235
ABSTRACT:
Contact structures exhibiting resilience or compliance for a variety of electronic components are formed by bonding a free end of a wire to a substrate, configuring thw wire into a wire stem having a springable shape, serving thw wire stem, and overcoating the wire stem with at least one layer of a material chosen primarily for its structural (resiliency, compliance) characteristics. A variety of techniques for configuring, serving, and overcoating the wire stem are disclosed. In an exemplary embodiment, a free end of a wire stem is bonded to a contact area on a substrate, the wire stem is configured to ahve a springable shape, the wire stem is served to be free-standing by an electrical discharge, and the free-standing wire stem is overcoating by plating.
REFERENCES:
patent: 5304534 (1994-04-01), Ciszek
patent: 5373627 (1994-12-01), Grebe
patent: 5847445 (1998-12-01), Wark et al.
Eldridge Benjamin N.
Grube Gary W.
Khandros Igor Y
Mathieu Gaetan L.
Collins D. M.
FormFactor Inc.
Picardat Kevin M.
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