Method of modifying an RF circuit of a plasma chamber to increas

Details Method of modifying an RF circuit of a plasma chamber to increas Method of modifying an RF circuit of a plasma chamber to increas

1998-01-22

2000-08-01

Dang, Thi

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

438905, 156345, 118723I, 118723IR, 31511151, H05H 100

Patent

active

060951591

ABSTRACT:
A method for controlling the voltage distribution of the standing wave impressed upon the coil of an inductively coupled plasma generator includes the steps of impressing a radio frequency voltage across the coil to establish a standing wave thereacross. A voltage profile is selected for the standing wave so as to control the location and amount of capacitive coupling. A circuit parameter is controlled to achieve the selected voltage profile. Proper selection of the voltage profile enhances process capabilities, decreases the time between cleans, minimizes component wear, and minimizes cleaning time. An apparatus for carrying out the disclosed method is also disclosed.

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S. M. Rossnagel et al., Metal Ion Deposition From Ionized Mangetron Sputtering Discharge, J. Vac Sci Technol. B 12(1), Jan./Feb. 1994, pp. 449-453, Yorktown Heights, New York.

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