Method of micromachining a semiconductor

Details Method of micromachining a semiconductor Method of micromachining a semiconductor

1997-02-25

1999-11-09

Breneman, Bruce

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 51, 216 99, 438 50, H01L 21302

Patent

active

059807628

ABSTRACT:
A method of micromachining a silicon wafer that simultaneously forms narrow gaps having a width of 10 .mu.m or less and wider gap portions using an anistropic etching solution. The etching solution contains KOH in a concentration of 35% or less and the penetration etching is carried out such that the etching of the opposing walls and the face of the silicon wafer occur at the same rate. A method of manufacturing a capacitance-type acceleration detector in a silicon wafer using the aforementioned etching method.

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Masahiro Tsugai, et al., "Capacitive Accelerameter Realized with (110)SI Bulk Micromachining" Jul. 22,1996.

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