Method of metallization in semiconductor devices

Details Method of metallization in semiconductor devices Method of metallization in semiconductor devices

1997-09-29

2000-12-12

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438660, 438669, 438686, 438687, 438688, H01L 2144

Patent

active

061598461

ABSTRACT:
The method of metallization in semiconductor devices provides a substrate having a conducting region and having an insulating layer formed on the substrate. The insulating layer has a contact hole which exposes the conducting region. Next, a silicon-containing metallization layer and a silicon-free metallization layer are sequentially formed on the insulating layer such that the silicon-containing metallization layer contacts the conducting region through the contact hole. After heat-treating the substrate, the two metallization layers are patterned.

REFERENCES:
patent: 4520554 (1985-06-01), Fisher
patent: 5869902 (1999-02-01), Lee et al.
patent: 5885898 (1999-03-01), Kim et al.

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