Method of measuring threshold voltage for a NAND flash...

Details Method of measuring threshold voltage for a NAND flash... Method of measuring threshold voltage for a NAND flash...

2006-04-18

2006-04-18

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Read/write circuit

Testing

C365S185010, C365S185180

Reexamination Certificate

active

07031210

ABSTRACT:
Provided is a method of measuring threshold voltages in a NAND flash memory device. In the method, a test voltage is applied to a wordline of selected memory cells to measure a distribution profile of threshold voltages of memory cells. A voltage summing up a pass voltage and an operation voltage is applied to wordlines of deselected cells. The operation voltage is applied to a well and a common source line. A voltage summing up a precharge voltage and the operation voltage is applied to a bitline. After then, a voltage variation on the bitline can be detected to measure a threshold voltage of a memory cell. A negative threshold voltage can be measured by applying a positive voltage with reference to a voltage, as the threshold voltage of the memory cell, set by subtracting the operation voltage from the test voltage in accordance with the bitline voltage variation.

REFERENCES:
patent: 6097638 (2000-08-01), Himeno et al.
patent: 6614688 (2003-09-01), Jeong et al.
patent: 6717861 (2004-04-01), Jeong et al.

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