Method of measuring oxygen in silicon

Details Method of measuring oxygen in silicon Method of measuring oxygen in silicon

1988-02-18

1989-01-31

Levy, Stewart J.

Measuring and testing

Gas content of a liquid or a solid

By vibration

422 80, G01N 3112

Patent

active

048007471

ABSTRACT:
A heat melting type gas extraction apparatus is employed to measure oxygen in a silicon sample. A double graphite crucible is first heated, in the absence of the sample or a flux metal, to extract oxygen therein. The flux metal is then added to the crucible and heated to extract oxygen therein. The sample is then added, melted, and heated to produce a sample gas for analysis.

REFERENCES:
patent: 2964389 (1960-12-01), Bennett et al.
patent: 3293902 (1966-12-01), Kraus
patent: 3751965 (1973-08-01), Kraus
patent: 3812705 (1974-05-01), Boillot
patent: 3899627 (1975-08-01), Sitek et al.
patent: 3946228 (1976-03-01), Biermann
patent: 4098576 (1978-07-01), Judge

Affiliated with

Also associated with

Rating

Method of measuring oxygen in silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of measuring oxygen in silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of measuring oxygen in silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-171769