Method of measuring minority carrier diffusion length and...

Details Method of measuring minority carrier diffusion length and... Method of measuring minority carrier diffusion length and...

2007-04-09

2010-06-01

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S787000, C438S788000, C438S795000, C257SE21531

Reexamination Certificate

active

07727783

ABSTRACT:
A method of measuring a diffusion length of a minority carrier in a silicon wafer by a surface photovoltage method including irradiating the surface-treated silicon wafer with ultraviolet radiation in an oxygen-containing atmosphere, and measuring a diffusion length of a minority carrier in a silicon wafer by a surface photovoltage method.

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patent: 6-069301 (1994-03-01), None
patent: 8-064650 (1996-03-01), None
English Language Abstract of JP 6-069301, Mar. 11, 1994.
English Language Abstract of JP 8-064650, Mar. 8, 1996.

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