Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2006-05-23
2006-05-23
Nguyen, Tuan H. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C156S345130, C216S060000
Reexamination Certificate
active
07049633
ABSTRACT:
A method of measuring at least one parameter associated with a portion of a sample having formed thereon one or more structures with at least two zones each having an associated zone reflectance property. The method includes the steps of illuminating the zones with broadband light, and measuring at least one reflectance property of light reflected from the at least two zones. The measurement includes a substantial portion of non-specularly scattered light, thereby increasing the quality of the measurement. The method further includes the step of fitting a parameterized model to the measured reflectance property. The parameterized model mixes the zone reflectance properties of the zones to account for partially coherent light interactions between the two zones.
REFERENCES:
patent: 4053232 (1977-10-01), Dill et al.
patent: 4757207 (1988-07-01), Chappelow et al.
patent: 4999014 (1991-03-01), Gold et al.
patent: 5166752 (1992-11-01), Spanier et al.
patent: 5293216 (1994-03-01), Moslehi
patent: 5425964 (1995-06-01), Southwell et al.
patent: 5900633 (1999-05-01), Solomon et al.
patent: 6100985 (2000-08-01), Scheiner et al.
patent: 6281027 (2001-08-01), Wei et al.
patent: 6327035 (2001-12-01), Li et al.
patent: 6654108 (2003-11-01), Ravid et al.
patent: 6690473 (2004-02-01), Stanke et al.
patent: 2005/0170751 (2005-08-01), Birang et al.
W. Kong et al., “A Hybrid Analysis of Ellipsometry Data from Patterned Structures,”American Institute of Physics, 1-56396-967-X/01, Characterization and Metrology for ULSI Technology: 2000 International Conference, 2001, pp. 373-377.
M.E. Lee et al., “Analysis of Reflectometry and Ellipsometry Data from Patterned Structures,” International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, Mar. 23-27, 1998,AIP Conference Proceedings 449, pp. 331-335, 1998, pp. 1-5.
W. Kong et al., “Analysis of Time-Evolved Spectroscopic Ellipsometry Data from Patterned Structures for Etching Process Monitoring and Control,” paper 19.2, SRC TECHCON, Las Vegas, Nevada, Sep. 9-11, 1998, 4 pages in length.
P.A. Heimann, “Optical Etch-Rate Monitoring Using Active Device Areas: Lateral Interference Effects,”J. Electrochem. Soc., vol. 132, No. 8, Aug. 1985, pp. 2003-2006.
P.A. Heimann et al., “Optical Etch-Rate Monitoring: Computer Simulation of Reflectance,”J. Electrochem. Soc., vol. 131, No. 4, Apr. 1984, pp. 881-885.
H.L. Maynard et al., “Multiwavelength ellipsometry for real-time process control of the plasma etching of patterned samples,”J. Vac. Sci. Technol. B, vol. 15, No. 1, Jan./Feb. 1997, pp. 109-115.
Johnson Kenneth C.
Stanke Fred E.
Nguyen Tuan H.
Stallman & Pollock LLP
Tokyo Electron Limited
LandOfFree
Method of measuring meso-scale structures on wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of measuring meso-scale structures on wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of measuring meso-scale structures on wafers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3568781