Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-06-28
2005-06-28
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S397000, C250S398000
Reexamination Certificate
active
06911660
ABSTRACT:
A method of determining beam twist and/or calibrating tilt angles of an ion beam of an ion beam implanter relative to a first channel of a crystalline target. The method can be used to calibrate the machine to an accuracy which is comparable to the precision of variance of such angle. The method includes the steps of a) providing reference data defining a known relationship between the beam tilt and twist angles and beam channeling in at least one preselected second channel of the crystalline target, at least some of the data providing first and second reference tilt angles at which channeling occurs for a given twist angle, the first and second tilt angles being different, b) without varying the twist angle, measuring channeling severity around a range of estimated tilt angles surrounding each of said first and second reference tilt angles and determining from the measurements a point of maximum channeling severity within each range; and c) comparing the determined points to the reference data to determine the twist angle and/or calibrate the tilt angle.
REFERENCES:
patent: 5180918 (1993-01-01), Isobe
patent: 5696382 (1997-12-01), Kwon
patent: 5898179 (1999-04-01), Smick et al.
patent: 5909622 (1999-06-01), Kadosh et al.
patent: 6255662 (2001-07-01), Rubin et al.
patent: 6555832 (2003-04-01), Ryding et al.
patent: 2002/0121889 (2002-09-01), Larsen et al.
Simonton, Robert and Tasch, Al, “Channeling Effects in Ion Implantation into Silicon”, Ion Implantation Science and Technology, 1996, pp. 293-390, Ion Implantation Technology Co., Yorktown, NY.
Elzer, R. Daniel et al., Paper entitled “Two Methods for Improved Accuracy Calibration and Control of Ion Implanter Incidence Angle”, 9 pages.
Elzer R.D. et al., “Two Methods for Improved Accuracy Calibration and Control of Ion Implanter Incidence Angle”, Advanced Semiconductor Manufacturing Conference and Workshop, 1999, IEEE/SEMI, Boston, MA, Sep. 8-10, 1999, pp. 343-347.
Klein K.M. et al., “Analysis of the Tilt and Rotation Angle Dependence of Boron Distributions Implanted into <100> Silicon”, Journal of the Electrochemical Society, vol. 138, No. 7, Jul. 1, 1991, pp. 2102-2107.
Gurzo Paul M.
Lee John R.
Varian Semiconductor Equipment Associates Inc.
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