Method of measuring free carrier concentration and/or thickness

Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed

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438 14, 438 17, 438 18, H01L 2166

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active

061534447

ABSTRACT:
The invention provides a method of measuring a carrier concentration and/or thickness of a semiconductor, which includes the steps of determining the carrier concentration by optical measurement means using a light having at least a frequency band which causes light absorption by free carriers in the semiconductor. A reflection amplitude ratio and a phase of the light or the result of measurement of substitute parameters therefor are obtained by the optical measurement means, and the carrier concentration and/or thickness is determined based on the reflection amplitude ratio and the phase or said result of measurement of the substitute parameter therefor.

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Patent Abstracts of Japan, vol. 018, No. 359, Jul. 6, 1994 & JP 06 097253 A (New Japan Radio Co Ltd; Others: 01), Apr. 8, 1994 (Abstract).

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