Method of measuring electron shading damage

Details Method of measuring electron shading damage Method of measuring electron shading damage

1997-09-05

1999-05-18

Dutton, Brian

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

324765, G01R31/26

Patent

active

059044900

ABSTRACT:
A method of measuring electron shading damage which includes the steps of: a) preparing a characteristic curve showing a flat band voltage change relative to an amount of injected charges, the curve being measured by intentionally flowing current through a first capacitor structure made of a lamination of a conductive layer, a nitride film and an oxide film formed on a semiconductor substrate; b) preparing a second capacitor structure made of a lamination of a conductive layer, a nitride film and an oxide film formed on the semiconductor substrate; c) preparing a sample by forming an insulating layer having an opening over the second capacitor structure on the semiconductor substrate, forming a conductive antenna layer connected to the conductive layer through the opening in the insulating layer, and forming an insulating mask pattern on the conductive antenna layer; d) performing a dry process on the sample, the dry process being a subject process for which the electron shading damage is measured; e) measuring a flat band voltage of the second capacitor structure before and after the dry process and calculating a change in the flat band voltage; and f) estimating from the calculated flat band voltage change an amount of charges injected into the second capacitor structure during the dry process, by referring to the characteristic curve. The method of measuring electron shading damage can reduce manufacture costs of a sample and provide a sufficiently high precision.

REFERENCES:
patent: 5638006 (1997-06-01), Nariani et al.
patent: 5779925 (1998-07-01), Hashimoto et al.
patent: 5846885 (1998-12-01), Kamata et al.
S. Tabara, "A New Etching Method for Reducing the Electron Shading Damage Using ICP Etcher", 1996 1.sup.st International Symposium on Plasma Process-Induced Damage, May 13-14, 1996, Santa Clara, CA., pp. 51-53.
K. Hashimoto, "New Phenomena of Charge Damage in Plasma Etching: Heavy Damage Only Through Dense-Line Antenna", Jpn. J. Appl. Phys., vol. 32 (1993), Part 1, No. 12B, Dec. 1993, pp. 6109-6113.
K. Hashimoto "Charge Damage Caused by Electron Shading Effect", Jpn. J. Appl. Phys., vol. 33 (1994), Part 1, No. 10, Oct. 1994, pp. 6013-6018.
K. Hashimoto, "Charging Damage in Semiconductor Process", Realize Publishing Co., Feb. 29, 1996, pp. 81-88 (No Translation).

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