Method of measuring electron shading damage

Details Method of measuring electron shading damage Method of measuring electron shading damage

1997-09-05

1999-08-17

Chaudhari, Chandra

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

438393, 438591, H01L 2166

Patent

active

059406828

ABSTRACT:
A method of measuring electron shading damage which includes the steps of: a) preparing a characteristic curve of a flat band voltage change relative to an amount of injected charges, by intentionally flowing current through a first capacitor; b) preparing a second capacitor similar to the first capacitor; c) making a sample by using the second capacitor by forming a lamination of an insulating layer having an opening over the second capacitor, a conductive antenna layer connected to the conductive layer through the opening in the insulating layer, and an insulating mask pattern on the conductive antenna layer, the insulating mask pattern including a looped opening which leaves a separated pattern on the second capacitor; d) performing a dry process of the sample to fully remove the conductive layer under the loop opening; e) measuring a flat band voltage of the second capacitor before and after the dry process and calculating a change in the flat band voltage; and f) estimating from the calculated flat band voltage change an amount of charges injected into the second capacitor during the dry process, by referring to the characteristic curve. The method can reduce manufacture costs of a sample and provide a sufficiently high precision.

REFERENCES:
patent: 4151537 (1979-04-01), Goldman et al.
patent: 4566173 (1986-01-01), Gossler et al.
patent: 5429965 (1995-07-01), Shimoji
patent: 5739052 (1998-04-01), Krishnan et al.
S. Tabara, "A New Etching Method for Reducing the Electron Shading Damage Using ICP Etcher", 1996 1.sup.st International Symposium on Plasma Process-Induced Damage, May 13-14, 1996, Santa Clara, CA., pp. 51-53.
K. Hashimoto, "New Phenomena of Charge Damage in Plasma Etching: Heavy Damage Only Through Dense-Line Antenna", Jpn. J. Appl. Phys., vol. 32 (1993), Part 1, No. 12B, Dec. 1993, pp. 6109-6113.
K. Hashimoto, "Charge Damage Caused by Electron Shading Effect", Jpn. J. Appl. Phys., vol. 33 (1994), Part 1, No. 10, Oct. 1994, pp. 6013-6018.
K. Hashimoto, "Charging Damage in Semiconductor Process", Realize Publishing Co., Feb. 29, 1996, pp. 81-88.

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