Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2008-07-29
2008-07-29
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
C438S017000, C438S018000, C438S197000, C438S268000, C324S762010, C257SE21531
Reexamination Certificate
active
07405090
ABSTRACT:
In a method of measuring an effective channel length and an overlap length, first to third metal-oxide semiconductor field effect transistors (MOSFETs) including first to third gate patterns, respectively, are formed on a substrate. A parasitic capacitance between the gate patterns and the substrate in the MOSFETs is determined based on first and second capacitances, which are measured by applying a first voltage between the gate patterns and the substrate. A second voltage is applied between the first gate pattern and the substrate in the first MOSFET and a third voltage between the third gate pattern and the substrate in the third MOSFET to measure capacitances. The capacitances are treated to obtain third and fourth capacitances excluding the parasitic capacitance. Overlap lengths of the gate patterns are obtained based on the third and fourth capacitances. Effective channel lengths of the gate patterns are obtained based on the overlap length.
REFERENCES:
patent: 6166558 (2000-12-01), Jiang et al.
patent: 6472233 (2002-10-01), Ahmed et al.
patent: 6514778 (2003-02-01), Huang et al.
patent: 2000-216258 (2000-08-01), None
patent: 2001-338986 (2001-12-01), None
Ahmadi Mohsen
Geyer Scott B.
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
LandOfFree
Method of measuring an effective channel length and an... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of measuring an effective channel length and an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of measuring an effective channel length and an... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2810500