Method of measuring a Fe-B concentration of a silicon wafer

Details Method of measuring a Fe-B concentration of a silicon wafer Method of measuring a Fe-B concentration of a silicon wafer

1996-02-20

1998-04-21

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

G01R 3126

Patent

active

057421765

ABSTRACT:
An evaluation method of a silicon wafer by correctly calculating the Fe--B concentration is disclosed. Even when the SPV method is utilized, the over-estimated Fe--B concentration in silicon wafers containing oxygen-precipitation defects can be avoided. Diffusion lengths Lb and La of minority carriers in a P-type silicon wafer before and after an activation step are measured by the SPV method. A value of (Lb--La)/Lb calculated from La and Lb is compared with a constant C which is read from the plot of Lb vs. (Lb--La). If (Lb--La)/Lb is smaller than constant C, the concentration calculation is terminated since there are oxygen-precipitation defects in the silicon wafer. The calculation is carried out for silicon wafers containing no oxygen-precipitation defects, and is based on the formula of Fe--B concentration (cm.sup.-3).apprxeq.1.times.10.sup.16 (La.sup.-2 --Lb.sup.-2). Therefore, the Fe--B concentration can be precisely determined even though the silicon wafers in which a high-density of oxygen-precipitation defects exist are mixed together with silicon rods.

REFERENCES:
patent: 4598249 (1986-07-01), Goodman et al.
patent: 4841239 (1989-06-01), Foell et al.
patent: 5369495 (1994-11-01), Lagowski
patent: 5661408 (1997-08-01), Kamieniecki et al.
29p-ZD-9; "Fe-B Concentration Measurement by SPV Method"; Extended Abstracts (The 41st Spring Meeting, 1994); The Japan Society of Applied Physics and Related Societies.
"Heavy Metal Contamination Measurement by sPV Method"; Date: Nov. 5, 6, and and 9, 1992 Place: 10F, Head office bldg. of Japan EDE Co. Lecturer: Dr. Lubek Jestrzebski, The vice-president of SDI and a professor of South Florida University Microelectronics Center.

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