Optics: measuring and testing – By dispersed light spectroscopy – Utilizing a spectrometer
Patent
1987-11-19
1989-02-28
McGraw, Vincent P.
Optics: measuring and testing
By dispersed light spectroscopy
Utilizing a spectrometer
356328, G01J 342
Patent
active
048079944
ABSTRACT:
A method of mapping implanted ion dose uniformity is disclosed in which wafers of polysilicon-on-silicon or polysilicon-on-oxidized-silicon are implanted with the ion dose to be mapped and then scanned in a spectrophotmeter using monochromatic radiation. An interference spectral technique is used to achieve improved sensitivity while preserving thermal and electrical properties close to those of actual devices.
REFERENCES:
patent: 4676647 (1987-06-01), Kikkawa et al.
Badalic and Runge, "A New Method to Monitor the Beam Profile in High-Current Ion Implantation Systems," J. Phys. E: Sci. Instrum., vol. 12, 1979.
Badalec and Runge, "Thin Silicon Films for Ion Beam Monitoring," Inst. Phys. Conf. Ser. No. 54, Chapter 3, 1980, pp. 91-94.
Ch. Kuhl, et al., "Optical Investigation of Different Silicon Films," Muchen, Germany.
Aspnes and Studna, "Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV," Physical Review B, vol. 27, No. 2, Jan. 15, 1983.
Richard Carl Eden, "Photoemission Studies of the Electronic Band Structures of Gallium Arsenide, Gallium Phosphide, and Silicon," May 1967, pp. 286 and 297.
Golin, Schell and Glaze, "Advanced Methods of Ion Implant Monitoring Using Optical Dosimetry," Solid State Technology, Jun. 1985, pp. 155-163.
Felch Susan B.
Powell Ronald A.
Cole Stanley Z.
Fisher Gerald M.
McGraw Vincent P.
Varian Associates Inc.
Warsh Kenneth L.
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