Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-02
2007-10-02
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S660000, C438S680000, C438S692000, C257SE21170, C257SE21010, C257SE21084, C257SE21304, C257SE21585
Reexamination Certificate
active
11135350
ABSTRACT:
A method of manufacturing a wiring substrate of the present invention, includes a step of preparing a substrate containing a semi-cured resin layer or a thermo plastic resin layer, a step of forming a through hole that passes through the substrate, a step of inserting a conductive parts in the through hole, a step of curing the semi-resin layer or the thermo plastic resin layer in a state that the resin layer is made to flow by applying a thermal press to the substrate and filling a clearance between the through hole and the conductive parts with the resin layer, and a step of forming a wiring pattern, which is connected mutually via the conductive parts, on both surface sides of the substrate.
REFERENCES:
patent: 2006/0012967 (2006-01-01), Asai et al.
patent: 2001-352166 (2001-12-01), None
patent: 2002-289999 (2002-10-01), None
patent: 2003-220595 (2003-08-01), None
Horikawa Yasuyoshi
Takemoto Keiichi
Kratz, Quintos & Hanson, LLP.
Nhu David
Shinko Electric Industries Co. Ltd.
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