Method of manufacturing wafer level package type FBAR device

Details Method of manufacturing wafer level package type FBAR device Method of manufacturing wafer level package type FBAR device

2007-10-16

2007-10-16

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Reexamination Certificate

active

10755336

ABSTRACT:
In a method for manufacturing an FBAR device, the device includes a substrate having a certain size, at least one device functional portion performing a resonance function by responding to electrical signals applied from the outside, the device functional portion being formed along a center portion of the substrate while defining a certain air gap therein, plural external electrodes formed on an upper surface of the substrate substantially coming into contact with both opposite edges of the upper surface, the external electrodes being electrically connected to the device functional portion, and a cap bonded onto the substrate so as to function as a cover for covering a remaining portion of the substrate except for the plural external electrodes.

REFERENCES:
patent: 6407649 (2002-06-01), Tikka et al.
patent: 6762471 (2004-07-01), Kim
patent: 09-172346 (1997-06-01), None
patent: 10-270979 (1998-10-01), None
patent: 02/05425 (2002-01-01), None
patent: 02/058233 (2002-07-01), None
Japanese Patent Office, Office Action mailed Jan. 9, 2007.

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