Method of manufacturing vertical GaN-based light emitting diode

Details Method of manufacturing vertical GaN-based light emitting diode Method of manufacturing vertical GaN-based light emitting diode

2008-04-22

2008-04-22

Rose, Kiesha L. (Department: 4176)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257S200000

Reexamination Certificate

active

07361521

ABSTRACT:
The present invention relates to a method of manufacturing a vertical GaN-based LED. The method includes forming an insulating pattern on a substrate to define LED regions having a predetermined size; sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate except for the insulating pattern to form a light emitting structure; removing the insulating pattern to divide the light emitting structure into LED sections having a predetermined size; forming p-electrodes on the LED sections, respectively; forming a structure support layer on the p-electrodes; removing the substrate to expose the divided n-type GaN-based semiconductor layer; and forming n-electrodes on the exposed n-type GaN-based semiconductor layer.

REFERENCES:
patent: 2007/0082486 (2007-04-01), Yang et al.
patent: 2005-4110 (2005-02-01), None
patent: 10-2005-0060740 (2005-06-01), None

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