Method of manufacturing three elemental diffusion barrier layer

Details Method of manufacturing three elemental diffusion barrier layer Method of manufacturing three elemental diffusion barrier layer

1997-10-28

2000-05-23

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438628, 438630, 438642, 438643, 438644, 438648, 438649, 438652, 438653, 438654, 438655, 438656, 438658, 438660, 438664, 438685, H01L 214763

Patent

active

060665548

ABSTRACT:
A three elemental compound for diffusion barrier layer having a superior diffusion barrier characteristics manufactured by forming the compound between the silicon diffused into the diffusion barrier layer and the two elemental compound for diffusion barrier layer before the metal wire layer penetrates into the diffusion barrier layer to reach the underlying silicon layer, using the different characteristics of the diffusion rate as above, is disclosed. A method of forming three elemental compound for diffusion barrier layer according to the present invention comprises a silicon substrate. A silicide layer is deposited on the silicon substrate. A refractory metal nitride layer is then deposited on the silicide layer. A metal wire layer is deposited on the refractory metal nitride layer. A heat treatment of the resulting structure is performed to form a three elemental compound for diffusion barrier layer between the silicide layer and the refractory metal nitride layer by out-diffusing a silicon contained in the silicide layer and reacting the silicon introduced into the refractory metal nitride layer with the refractory metal nitride layer, such that the diffusion barrier characteristics is improved.

REFERENCES:
patent: 4855798 (1989-08-01), Imamura et al.
patent: 5639678 (1997-06-01), Lee et al.
Tadashi Iijima et al., Inlaid Cu Interconnects Employing Ti-Si-N Barrier Metal for ULSI Applications, Apr. 1996, pp. 568-572, IEICE Trans Electron vol. E79-C No. 4.

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