Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-05-04
2009-12-08
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S155000, C438S158000, C257S072000, C257S347000, C257SE21413, C257SE21414
Reexamination Certificate
active
07629208
ABSTRACT:
A method of manufacturing a thin film transistor capable of inhibiting the characteristics variation of the thin film transistor without deteriorating the characteristics thereof is provided. A crystalline silicon film is formed by indirect heat treatment through a photothermal conversion layer and a buffer layer. By patterning the buffer layer and an insulating film, a channel protective film is selectively formed in a region corresponding to a channel region on the crystalline silicon film. Further, when an n+ silicon film and a metal layer are selectively removed, the channel protective film functions as an etching stopper. When the crystalline silicon film is formed, heat is uniformly supplied. Further, in etching, the channel region of the crystalline silicon film is protected.
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Japanese Office Action issued on Apr. 15, 2008.
Japanese Office Action dated Jul. 9, 2008 for Application No. 2006-131056.
Arai Toshiaki
Inagaki Yoshio
Doan Theresa T
Sonnenschein Nath & Roesnthal LLP
Sony Corporation
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