Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1999-06-29
2000-10-31
Smith, Matthew
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438151, 438158, 257 66, 257 72, 349 42, H01L 2100, H01L 2904, H01L 29786, G02F 1136
Patent
active
061401587
ABSTRACT:
A method of manufacturing a TFT-LCD which can prevent damage due to a mask process and reduce cost by minimizing mask process number, is disclosed. A three-mask process is required for fabricating a TFT-LCD in the present invention. Firstly, on a transparent insulating substrate are formed a semiconductor layer, a doped semiconductor layer and a first metal layer, sequentially. The first metal layer is then etched using a first mask, to form source and drain electrodes spaced to a selected distance. Next, the doped semiconductor layer is etched using the source and drain electrodes as an etch mask, to form ohmic layers under the source and drain electrodes. A gate insulating layer and a second metal layer are then formed on the overall substrate, in sequence. Thereafter, the second metal layer is etched using a second mask, to form a gate electrode overlapped with the insides of the source and drain electrodes. The gate insulating layer is then etched the gate using electrode as an etch mask, to expose the semiconductor layer and the exposed semiconductor layer is etched using the ohmic layers as an etch mask, to form a channel layer. Next, a transparent metal layer is formed on the overall substrate and etched using a third mask, to form a pixel electrode connected to the source electrode. Furthermore, when forming the pixel electrode, a gate line is connected to a data line by the transparent metal layer in a pad region.
REFERENCES:
patent: 4422090 (1983-12-01), Shepherd et al.
patent: 4888632 (1989-12-01), Haller
patent: 4965646 (1990-10-01), Ipri et al.
patent: 5311041 (1994-05-01), Tominaga et al.
patent: 5346833 (1994-09-01), Wu
patent: 5478766 (1995-12-01), Park et al.
patent: 5532180 (1996-07-01), Den Boer et al.
patent: 5737041 (1998-04-01), Holmberg et al.
patent: 5814836 (1998-09-01), Hyun
Loisel et al, "Two Mask Step Plysilicon TFT Technology for Flat Panel Displays", Electronics Letters, 4th Feb. 1988, vol. 24, No. 3, pp. 156-157 .
Im Seong Sil
Rhee Jeong Hun
Hyundai Electronics Industries Co,. Ltd.
Malsauma Lex H.
Smith Matthew
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