Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Passivating of surface
Reexamination Certificate
2011-04-19
2011-04-19
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Passivating of surface
C438S151000
Reexamination Certificate
active
07927900
ABSTRACT:
Disclosed is a method of manufacturing a thin film transistor, in which a semiconductor layer and a gate insulating film may be formed through ink jet printing using a single bank, thereby simplifying the manufacturing process and decreasing the manufacturing cost, leading to more economical thin film transistors. The thin film transistor manufactured using the method of example embodiments may be used as a switching element for sensors, memory devices, optical devices, and active matrix flat panel displays.
REFERENCES:
patent: 2003/0067005 (2003-04-01), De Leeuw et al.
patent: 2007/0023837 (2007-02-01), Lee et al.
patent: 2006-261538 (2006-09-01), None
patent: 1020060072503 (2006-06-01), None
Kee In Seo
Ko Ick Hwan
Lee Young Gu
Shim Hong Shik
Brewster William M.
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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