Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-04-28
2009-06-30
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S486000, C257S066000, C257S072000, C257SE29292
Reexamination Certificate
active
07553714
ABSTRACT:
A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an amorphous silicon film on a substrate, removing a silicon oxide layer from a surface of the amorphous silicon film, forming a silicon oxide layer on the surface of the amorphous silicon film, and forming a polycrystalline Si layer by crystallizing the amorphous silicon film.
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Chinese Office Action dated May 23, 2008.
Jang Keun-Ho
Kim Hyun-Gue
Lee Hong-Ro
H. C. Park & Associates, PLC
Samsung Mobile Display Co., Ltd.
Smoot Stephen W
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