Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-12-07
2010-11-30
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S296000
Reexamination Certificate
active
07842560
ABSTRACT:
A method of manufacturing a thin film transistor includes: forming a gate insulating layer on a substrate having a gate electrode; forming a semiconductor layer of nanomaterial on the gate insulating layer; forming a source electrode and a drain electrode on the gate insulating layer; and applying a voltage to the source electrode and the drain electrode to arrange a direction of the nanomaterial.
REFERENCES:
patent: 7427328 (2008-09-01), Duan et al.
patent: 2003/0060038 (2003-03-01), Sirringhaus et al.
patent: 2006/0003438 (2006-01-01), Engstrom et al.
patent: 2007/0285843 (2007-12-01), Tran
Lee Bo Hyun
Moon Tae Hyoung
Choudhry Mohammad
LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Smith Bradley K
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