Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-08-05
2008-10-07
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S197000, C438S680000, C438S780000, C257SE21170, C257SE21224, C257SE21227, C257SE21229, C257SE21246, C257SE21347, C257SE21411
Reexamination Certificate
active
07432137
ABSTRACT:
A method of manufacturing a thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode; forming a semiconductor layer on the gate insulating film; forming a bank including a first bank portion and a second bank portion, the first bank portion being located at substantially a central portion of the semiconductor layer, the second bank portion having a thin film portion for surrounding the semiconductor layer and a thick film portion for surrounding the thin film portion at a periphery of the semiconductor layer; arranging first functional liquid containing a conductive material in a region surrounded by the thin film portion and the first bank portion such that the first functional liquid covers the semiconductor layer; drying the first functional liquid to obtain a first conductive film; removing the thin film portion selectively after drying the first functional liquid; arranging second functional liquid including a conductive material on a region from which the thin film portion is removed such that the second functional liquid extends to the first conductive film; and drying the second functional liquid to obtain a second conductive film.
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Nhu David
Oliff & Berridg,e PLC
Seiko Epson Corporation
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