Method of manufacturing thin film transistor

Details Method of manufacturing thin film transistor Method of manufacturing thin film transistor

2006-12-12

2006-12-12

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S308000, C438S378000, C438S473000

Reexamination Certificate

active

07148091

ABSTRACT:
Impurity ions contained in a semiconductor layer are diffused downwardly from a gate electrode by irradiating laser light from the back surface of a transparent substrate after source-drain regions are formed. Thus, a GOLD structure is formed. Consequently, the GOLD structure is formed by performing a smaller number of processes. Also, variation in characteristics can be suppressed by preventing occurrence of asymmetry between left and right LDD regions.

REFERENCES:
patent: 6380044 (2002-04-01), Talwar et al.
patent: 5-121436 (1993-05-01), None
patent: 10-154813 (1998-06-01), None
patent: 2000-91591 (2000-03-01), None
patent: 2000-269133 (2000-09-01), None
patent: 2000-349297 (2000-12-01), None
patent: 2002-367904 (2002-12-01), None
H. Nakagawa et al., “Reliability of Low Temperature Poly-Si Gold (Gate-Overlapped LDD) Structure TFTs”, AM-LCD, 2002, 167-170.

Affiliated with

Also associated with

Rating

Method of manufacturing thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3701418