Method of manufacturing thin film transistor

Details Method of manufacturing thin film transistor Method of manufacturing thin film transistor

1997-12-01

2000-08-01

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 438161, 438163, 438164, H01L 2100

Patent

active

060965851

ABSTRACT:
A thin film transistor (TFT) is provided with a precisely, lightly doped drain (LDD) structure formed on a substrate of insulators, such as a glass sheet. A method of making the TFT and a liquid crystal display device with the same are disclosed. The TFT with the LDD structure include a side wall and a gate insulation layer. An intermediate layer is provided between the side wall and the gate insulation layer. The intermediate layer is different in layer property from the side wall. When the side wall is formed by an anisotropic etching process, the etching can be stopped on the surface of intermediate layer. As a result, the gate insulation layer and the substrate are protected against the etching.

REFERENCES:
patent: 4946799 (1990-08-01), Blake et al.
patent: 5753543 (1998-05-01), Sandhu et al.
patent: 5763301 (1998-06-01), Rha et al.
patent: 5834343 (1998-11-01), Ogasawara et al.

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