Method of manufacturing thin film transistor

Details Method of manufacturing thin film transistor Method of manufacturing thin film transistor

1997-03-28

1998-10-20

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438159, H01L 21336, H01L 2100

Patent

active

058245723

ABSTRACT:
A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulation film covering the gate electrode; forming an active semiconductor layer and an ohmic contact layer on the gate insulation film; forming a source/drain electrode made of Cr; and removing a portion of the ohmic contact layer except for the portion in contact with the source/drain electrode by an etching solution, wherein the step of removing the ohmic contact layer is conducted in a state of at least partially or entirely peeling a resist on the source/drain electrode made of Cr.

REFERENCES:
patent: 4624737 (1986-11-01), Shimbo
patent: 4684435 (1987-08-01), Kishi et al.
patent: 4704783 (1987-11-01), Possin et al.
patent: 4778773 (1988-10-01), Sukegawa
patent: 4843438 (1989-06-01), Koden
patent: 4935792 (1990-06-01), Tanaka et al.
patent: 5150181 (1992-09-01), Takeda et al.
patent: 5166085 (1992-11-01), Wakai et al.
patent: 5198694 (1993-03-01), Kwasnick et al.
patent: 5355002 (1994-10-01), Wu
patent: 5367179 (1994-11-01), Mori et al.
patent: 5576555 (1996-11-01), Yamanobe et al.

Affiliated with

Also associated with

Rating

Method of manufacturing thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-243753