Method of manufacturing thin film semiconductor device, thin...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S163000, C438S164000

Reexamination Certificate

active

11175267

ABSTRACT:
A method of manufacturing a thin film semiconductor device which includes a thin film transistor having a first semiconductor layer, a gate insulating layer, and a gate electrode which are laminated in this order on a substrate, and a capacitive element having a lower electrode that conductively connects a second semiconductor layer coplanar with the first semiconductor layer, a dielectric layer coplanar with the gate insulating layer, and an upper electrode coplanar with the gate electrode which are laminated in this order on the substrate is provided. The method includes, after simultaneously forming the gate insulating layer and the dielectric layer, and before forming the gate electrode and the upper electrode, introducing dopants into the second semiconductor layer from a first opening of a mask formed on a surface of the substrate to form the lower electrode, and etching a surface of the dielectric layer from the first opening of the mask.

REFERENCES:
patent: 6542205 (2003-04-01), Ohtani et al.
patent: 6583472 (2003-06-01), Shibata et al.
patent: 6618029 (2003-09-01), Ozawa
patent: 6808964 (2004-10-01), Hayashi et al.
patent: 6852577 (2005-02-01), Chen
patent: 6867077 (2005-03-01), Nakazawa et al.
patent: 6878584 (2005-04-01), Seo et al.
patent: 6887742 (2005-05-01), Baek et al.
patent: 6955953 (2005-10-01), Yamazaki et al.
patent: 7098086 (2006-08-01), Shibata et al.
patent: 7122835 (2006-10-01), Ikeda et al.
patent: 7179698 (2007-02-01), Yamazaki et al.
patent: 2001/0029070 (2001-10-01), Yamazaki et al.
patent: 2002/0048864 (2002-04-01), Yamazaki et al.
patent: 2003/0138998 (2003-07-01), Yamazaki et al.
patent: 2003/0151568 (2003-08-01), Ozawa
patent: 2003/0193493 (2003-10-01), Ozawa
patent: 2003/0219932 (2003-11-01), Isobe et al.
patent: 2004/0002180 (2004-01-01), Kim et al.
patent: 2004/0096999 (2004-05-01), Lin et al.
patent: 2004/0241918 (2004-12-01), Sera
patent: 2004/0248387 (2004-12-01), Kawasaki et al.
patent: 2005/0052371 (2005-03-01), Ozawa
patent: 2005/0167674 (2005-08-01), Shibata et al.
patent: 2006/0008955 (2006-01-01), Sera et al.
patent: 2006/0076560 (2006-04-01), Eguchi et al.
patent: 2006/0079035 (2006-04-01), Eguchi et al.
patent: 2007/0026583 (2007-02-01), Ikeda et al.
patent: 2007/0099128 (2007-05-01), Sera et al.
patent: 06-130413 (1994-05-01), None
patent: A-2000-353811 (2000-12-01), None
patent: A-2002-149087 (2002-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing thin film semiconductor device, thin... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing thin film semiconductor device, thin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing thin film semiconductor device, thin... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3927221

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.