Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-07-01
2008-07-01
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21001
Reexamination Certificate
active
07393725
ABSTRACT:
A method of manufacturing a thin film device includes forming a pair of multi-layered structures by bonding a transfer layer including a thin film device to a temporary transfer substrate, respectively adhering the transfer layers of a pair of the multi-layered structures to both surfaces of a transfer-target substrate; and separating the temporary transfer substrate from each of the transfer layers adhered to the transfer-target substrate. The bonding step includes forming the transfer layer on a transfer-source substrate via a first separation layer separated in accordance with application of a predetermined amount of energy, bonding the transfer layer to the temporary transfer substrate, and separating the transfer-source substrate from the transfer layer by applying energy to the first separation layer to cause a boundary separation and/or an intra-layer separation in the first separation layer.
REFERENCES:
patent: 5374329 (1994-12-01), Miyawaki
patent: 6887650 (2005-05-01), Shimoda et al.
patent: 05-217824 (1993-08-01), None
patent: 10-125929 (1998-05-01), None
patent: 10-125930 (1998-05-01), None
patent: 10-125931 (1998-05-01), None
patent: 10/177187 (1998-06-01), None
patent: 11-251517 (1999-09-01), None
patent: 11-251518 (1999-09-01), None
patent: 2000-133809 (2000-05-01), None
patent: 2001-051296 (2001-02-01), None
patent: 2001-125138 (2001-05-01), None
patent: 2001-189460 (2001-07-01), None
patent: 2002-217390 (2002-08-01), None
patent: 2002-217391 (2002-08-01), None
patent: 2003-031778 (2003-01-01), None
patent: 2003-298029 (2003-10-01), None
Geyer Scott B.
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
LandOfFree
Method of manufacturing thin film device electro-optic... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing thin film device electro-optic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing thin film device electro-optic... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2762551