Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1996-03-28
1999-11-09
Russel, Jeffrey E.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427570, 427571, 427574, 427575, 427577, 427578, H01L 2120, H01L 21302, H05H 124
Patent
active
059809990
ABSTRACT:
A first reactive gas is introduced into a vacuum chamber and a plasma of the thus introduced reactive gas is produced. A second reactive gas is introduced into a radical generating chamber and is dissociated to generate radicals whose density and composition are well controlled. Then, the thus generated radicals are injected into the plasma generated within the vacuum chamber such that an amount of a desired kind of radicals within the plasma is selectively increased or decreased. In this manner, a thin film having an excellent property can be deposited on a substrate placed in the vacuum chamber. Alternatively, a surface of a substrate placed in the vacuum chamber can be processed precisely and selectively.
REFERENCES:
patent: 4504518 (1985-03-01), Ovshinsky et al.
patent: 4828649 (1989-05-01), Davis et al.
patent: 4878994 (1989-11-01), Jucha et al.
patent: 4886570 (1989-12-01), Davis et al.
patent: 5122431 (1992-06-01), Kodama et al.
patent: 5560779 (1996-10-01), Knowles et al.
Goto Toshio
Hiramatsu Mineo
Hori Masaru
Nawata Masahito
Nagoya University
Russel Jeffrey E.
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