Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2011-06-14
2011-06-14
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S066000, C257S291000, C257S443000
Reexamination Certificate
active
07960728
ABSTRACT:
In a method of manufacturing a TFT substrate in accordance with an exemplary aspect of the present invention, an intrinsic semiconductor film, an impurity semiconductor film, and a conductive film for source lines are formed in succession, and a resist having a thin-film portion and a thick-film portions is formed on the conductive film for source lines. Then, etching is performed by using the resist as a mask, and after that, a part of the conductive film for source lines is exposed by removing the thin-film portion of the resist. Next, the exposed conductive film for source lines is etched by using the thick-film portions of the resist a mask, so that the impurity semiconductor film is exposed. Then, by etching the exposed impurity semiconductor film, a back channel region of a TFT108is formed. Further, a dummy back channel region18a, which is irrelevant to the operation of the finished product, is also formed in a portion other than the TFT108region.
REFERENCES:
patent: 6255130 (2001-07-01), Kim
patent: 6449022 (2002-09-01), Fukata et al.
patent: 7026688 (2006-04-01), Kim et al.
patent: 7381601 (2008-06-01), Kim et al.
patent: 7648883 (2010-01-01), Park
patent: 2001/0019373 (2001-09-01), Kobayashi et al.
patent: 2002/0106843 (2002-08-01), Tsujimura et al.
patent: 2010/0194739 (2010-08-01), Takatori
patent: 11-242241 (1999-09-01), None
patent: 2000-164886 (2000-06-01), None
patent: 2002-244586 (2002-08-01), None
patent: 2005-93902 (2005-04-01), None
patent: WO 2004/038780 (2004-05-01), None
Itoh Yasuyoshi
Masutani Yuichi
Miyamoto Ken'ichi
Shibata Eiji
Luu Chuong A.
Mitsubishi Electric Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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