Method of manufacturing TFT array

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S313000, C430S396000

Reexamination Certificate

active

06884569

ABSTRACT:
In the halftone region of a photomask, uniformity in thickness of the photoresist is enhanced. The halftone region of the photomask is arranged such that a transmitting portion and a shielding portion are alternately provided to form a transmitting/shielding pattern. The transmitting portion at the end of the transmitting/shielding pattern has a larger area than the other transmitting portion.

REFERENCES:
patent: 5851702 (1998-12-01), Watanabe
patent: 5879844 (1999-03-01), Yamamoto
patent: 6069019 (2000-05-01), Ishii et al.
patent: 10-163 174 (1998-06-01), None
patent: 2000-066240 (2000-03-01), None

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